Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
Identifieur interne : 000475 ( Main/Repository ); précédent : 000474; suivant : 000476Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
Auteurs : RBID : Pascal:13-0201211Descripteurs français
- Pascal (Inist)
- Multicouche, Couche multimoléculaire, Résolution angulaire, Diffractomètre RX, Diffraction RX, Puits quantique multiple, Méthode MOVPE, Aire sélective, Croissance sélective, Rayonnement synchrotron, Section efficace, Coupe transversale, Déconvolution, Epitaxie phase vapeur, Puits quantique, Nanomatériau, Semiconducteur III-V, Substrat indium phosphure, Substrat InP, 8115K, 8107.
English descriptors
- KwdEn :
Abstract
This paper reports the latest improvements performed on structural characterization by high resolution x-ray diffraction (XRD) on InGaAlAs-based multiple quantum well (MQW) structures on InP substrates, produced by metal organic vapor phase epitaxy in the regime of selective area growth (SAG). A new diffractometer, with a sub-millimeter x-ray spot, was used in the laboratory to study the MQW properties specifically in the SAG area. The results were compared to those obtained with a much smaller beam size using synchrotron radiation-based XRD. We show that a unique diffraction curve measured with the first setup fits the summation of a series of diffraction curves taken with the second setup in the cross section of the SAG area. More interestingly, applying some deconvolution criteria on this curve, a diffraction curve corresponding to the center of the mask area could be calculated and compared to the corresponding one taken among the second series. The excellent agreement between those curves proves that precious information of structural properties (such as strain and thickness) of the MQW in the center of the SAG area can be obtained from laboratory based measurements.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000C73
Links to Exploration step
Pascal:13-0201211Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer</title><author><name sortKey="Decobert, J" uniqKey="Decobert J">J. Decobert</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>III-V Lab, Route de Nozay</s1><s2>91460 Marcoussis</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marcoussis</settlement></placeName></affiliation></author><author><name sortKey="Guillamet, R" uniqKey="Guillamet R">R. Guillamet</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>III-V Lab, Route de Nozay</s1><s2>91460 Marcoussis</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marcoussis</settlement></placeName></affiliation></author><author><name sortKey="Mocuta, C" uniqKey="Mocuta C">C. Mocuta</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Synchrotron SOLEIL, l'Ormes des Merisiers BP48</s1><s2>91192 Gif-sur-Yvette</s2><s3>FRA</s3><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Gif-sur-Yvette</settlement></placeName></affiliation></author><author><name sortKey="Carbone, G" uniqKey="Carbone G">G. Carbone</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>ESRF, 6 rue Jules Horowitz, BP220</s1><s2>38043 Grenoble</s2><s3>FRA</s3><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Guerault, H" uniqKey="Guerault H">H. Guerault</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Bruker AXS GmbH, O. Rheinbrueckenstr. 49</s1><s2>76187 Karlsruhe</s2><s3>DEU</s3><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Karlsruhe</region><settlement type="city">Karlsruhe</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0201211</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0201211 INIST</idno><idno type="RBID">Pascal:13-0201211</idno><idno type="wicri:Area/Main/Corpus">000C73</idno><idno type="wicri:Area/Main/Repository">000475</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Angular resolution</term><term>Cross section</term><term>Cross sections</term><term>Deconvolution</term><term>III-V semiconductors</term><term>MOVPE method</term><term>Multilayer</term><term>Multilayers</term><term>Multiple quantum well</term><term>Nanostructured materials</term><term>Quantum wells</term><term>Selective area</term><term>Selective growth</term><term>Synchrotron radiation</term><term>VPE</term><term>X-ray diffractometers</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Multicouche</term><term>Couche multimoléculaire</term><term>Résolution angulaire</term><term>Diffractomètre RX</term><term>Diffraction RX</term><term>Puits quantique multiple</term><term>Méthode MOVPE</term><term>Aire sélective</term><term>Croissance sélective</term><term>Rayonnement synchrotron</term><term>Section efficace</term><term>Coupe transversale</term><term>Déconvolution</term><term>Epitaxie phase vapeur</term><term>Puits quantique</term><term>Nanomatériau</term><term>Semiconducteur III-V</term><term>Substrat indium phosphure</term><term>Substrat InP</term><term>8115K</term><term>8107</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper reports the latest improvements performed on structural characterization by high resolution x-ray diffraction (XRD) on InGaAlAs-based multiple quantum well (MQW) structures on InP substrates, produced by metal organic vapor phase epitaxy in the regime of selective area growth (SAG). A new diffractometer, with a sub-millimeter x-ray spot, was used in the laboratory to study the MQW properties specifically in the SAG area. The results were compared to those obtained with a much smaller beam size using synchrotron radiation-based XRD. We show that a unique diffraction curve measured with the first setup fits the summation of a series of diffraction curves taken with the second setup in the cross section of the SAG area. More interestingly, applying some deconvolution criteria on this curve, a diffraction curve corresponding to the center of the mask area could be calculated and compared to the corresponding one taken among the second series. The excellent agreement between those curves proves that precious information of structural properties (such as strain and thickness) of the MQW in the center of the SAG area can be obtained from laboratory based measurements.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>370</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>16th International Conference on Metalorganic Vapor Phase Epitaxy</s1></fA09><fA11 i1="01" i2="1"><s1>DECOBERT (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>GUILLAMET (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>MOCUTA (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>CARBONE (G.)</s1></fA11><fA11 i1="05" i2="1"><s1>GUERAULT (H.)</s1></fA11><fA12 i1="01" i2="1"><s1>JONG KYU KIM</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>KUECH (Thomas F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>CANEAU (Catherine)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>REDWING (Joan M.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>DADGAR (Armin)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>III-V Lab, Route de Nozay</s1><s2>91460 Marcoussis</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Synchrotron SOLEIL, l'Ormes des Merisiers BP48</s1><s2>91192 Gif-sur-Yvette</s2><s3>FRA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>ESRF, 6 rue Jules Horowitz, BP220</s1><s2>38043 Grenoble</s2><s3>FRA</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Bruker AXS GmbH, O. Rheinbrueckenstr. 49</s1><s2>76187 Karlsruhe</s2><s3>DEU</s3><sZ>5 aut.</sZ></fA14><fA20><s1>154-156</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000500688410330</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>7 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0201211</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper reports the latest improvements performed on structural characterization by high resolution x-ray diffraction (XRD) on InGaAlAs-based multiple quantum well (MQW) structures on InP substrates, produced by metal organic vapor phase epitaxy in the regime of selective area growth (SAG). A new diffractometer, with a sub-millimeter x-ray spot, was used in the laboratory to study the MQW properties specifically in the SAG area. The results were compared to those obtained with a much smaller beam size using synchrotron radiation-based XRD. We show that a unique diffraction curve measured with the first setup fits the summation of a series of diffraction curves taken with the second setup in the cross section of the SAG area. More interestingly, applying some deconvolution criteria on this curve, a diffraction curve corresponding to the center of the mask area could be calculated and compared to the corresponding one taken among the second series. The excellent agreement between those curves proves that precious information of structural properties (such as strain and thickness) of the MQW in the center of the SAG area can be obtained from laboratory based measurements.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07Z</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Multicouche</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Multilayers</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Couche multimoléculaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Multilayer</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Capa multimolecular</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Résolution angulaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Angular resolution</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Diffractomètre RX</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>X-ray diffractometers</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>XRD</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Puits quantique multiple</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Multiple quantum well</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>MOVPE method</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Aire sélective</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Selective area</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Croissance sélective</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Selective growth</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Rayonnement synchrotron</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Synchrotron radiation</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Section efficace</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Cross sections</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Coupe transversale</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Cross section</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Corte transverso</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Déconvolution</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Deconvolution</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>VPE</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Puits quantique</s0><s5>29</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Quantum wells</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Substrat indium phosphure</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Substrat InP</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8107</s0><s4>INC</s4><s5>72</s5></fC03><fN21><s1>182</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ICMOVPE-XVI International Conference on Metalorganic Vapor Phase Epitaxy</s1><s2>16</s2><s3>Busan KOR</s3><s4>2012-05-20</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000475 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000475 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0201211
|texte= Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
}}
| This area was generated with Dilib version V0.5.77. |  |